Unipolar resistive switching properties of amorphous Pr0.7Ca0.3MnO3 films grown on a Pt/Ti/SiO2/Si substrate

作者：Seong Tae Geun; Lee Beom Seok; Choi Kyu Bum; Kweon Sang Hyo; Kim Beom Yong; Jung Kyooho; Moon Ji Won; Lee Kee Jeong; Hong Kwon; Nahm Sahn^*

来源：Current Applied Physics, 2014, 14(4): 538-542.

DOI：10.1016/j.cap.2014.01.012

• PCMO
• ReRAM
• Resistive switching
• Thin film

Amorphous Pr0.7Ca0.3MnO3 (APCMO) films were grown on a Pt/Ti/SiO2/Si (Pt-Si) substrate at temperatures below 500 degrees C and the Pt/APCMO/Pt-Si device showed unipolar resistive switching behavior. Conduction behavior of the low resistance state (LRS) of the Pt/APCMO/Pt-Si device followed Ohm's law, and the resistance in LRS was independent of the size of the device, indicating that the conduction behavior in LRS can be explained by the presence of the conductive filaments. On the other hand, the resistance in the high resistance state (HRS) decreased with increasing the device size, and the conduction mechanism in the HRS was explained by Schottky emission.

• 出版日期2014-4