Anomalous arsenic diffusion at InGaAs/InP interface

作者：Zhang, Yaguang; Gu, Yi^*; Zheng, Wenlong; Chen, Pingping; Zheng, Yuanliao; Zhang, Yonggang; Shao, Xiumei; Li, Xue; Gong, Haimei^*

来源：Materials Research Express, 2019, 6(3): 035908.

DOI：10.1088/2053-1591/aaf6bf

• InGaAs/InP
• heterointerface
• P/As exchange
• atomic diffusion

The anomalous arsenic (As) diffusion at the In0.53Ga0.47As/InP interface grown by solid source molecular beam epitaxy has been reported in this work. Heterointerface samples were grown using group-V switches of P-2 to As-2 or to As-4. High-resolution x-ray diffraction (XRD), photoluminescence (PL), 3D atom probe (3DAP) and high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM) data have shown that, an up to hundred-nanometer-thick composition-graded InAsyP1-y layer formed in the InP buffer layer for the sample grown by P-2 to As-2. This observation demonstrates a rapid replacement of P by As atoms at the heterointerface and a deep As diffusion into the lower InP buffer. In contrary, a sharper heterointerface without the composition-graded layer was obtained in the sample grown using P-2 to As-4. These findings give insight into the distinct properties of different As species in the InGaAs/InP interface growth.

• 出版日期2019-3
• 单位中国科学院大学; 中国科学院上海微系统与信息技术研究所; 红外物理国家重点实验室; 上海理工大学; 中国科学院上海技术物理研究所; 信息功能材料国家重点实验室; 传感技术国家重点实验室