Microstructure of PAMBE-grown InN layers on Si(111)

作者：Walther R^*; Litvinov D; Fotouhi M; Schneider R; Gerthsen D; Voehringer R; Hu D Z; Schaadt D M

来源：Journal of Crystal Growth, 2012, 340(1): 34-40.

DOI：10.1016/j.jcrysgro.2011.11.068

• Crystal structure
• Defects
• Meltback etching
• Molecular beam epitaxy
• Nitrides
• Semiconducting III/V materials

The microstructure of InN layers grown by plasma-assisted molecular beam epitaxy on Si(111) substrates and an AIN buffer layer was investigated. InN layers with a thickness of similar to 500 nm were deposited at substrate temperatures between 325 degrees C and 375 degrees C under otherwise identical conditions. The structural characterization was performed by scanning electron microscopy and different transmission electron microscopy techniques including selective-area electron diffraction, electron-energy loss spectroscopy and energy-dispersive X-ray spectroscopy. The microstructure of the InN layers changes considerably despite the comparably small interval of growth temperatures.

• 出版日期2012-2-1