摘要
Lower absorption, lower refractive index, and tunable resistance are three advantages of amorphous silicon oxide containing nanocrystalline silicon grains (nc-SiO(x)) compared to microcrystalline silicon (mu c-Si), when used as a p-type layer in mu c-Si thin-film solar cells. We show that p-nc-SiO(x) with its particular nanostructure increases mu c-Si cell efficiency by reducing reflection and parasitic absorption losses depending on the roughness of the front electrode. Furthermore, we demonstrate that the p-nc-SiO(x) reduces the detrimental effects of the roughness on the electrical characteristics, and significantly increases mu c-Si and Micromorph cell efficiency on substrates until now considered too rough for thin-film silicon solar cells.
- 出版日期2010-11-22