摘要

We reported a systematic study about the anisotropic optical nonlinearities in bulk m-plane and a-plane GaN crystals by Z-scan and pump-probe with phase object methods under picosecond at 532 nm. The two-photon absorption coefficient, which was measured as a function of polarization angle, exhibited oscillation curves with a period of pi/2, indicating a highly polarized optical third-order nonlinearity in both nonpolar GaN samples. Furthermore, free-carrier absorption revealed stronger hole-related absorption for E perpendicular to c than for E//c probe polarization. In contrast, free-carrier refraction was found almost isotropic due to electron-related refraction in the isotropic conduction bands.