Memory resistive switching in CeO2-based film microstructures patterned by a focused ion beam

作者：Velichko A; Boriskov P^*; Savenko A; Grishin A; Khartsev S; Yar M Ahmed; Muhammed M

来源：Thin Solid Films, 2014, 556: 520-524.

DOI：10.1016/j.tsf.2014.01.053

• Oxide heterostructure
• Memory resistive switching
• Focused ion beam

Heteroepitaxial CeO2 (80 nm)/La0.5Sr0.5CoO3 (500 nm) film structure has been pulsed laser deposited on a sapphire substrate. The Ag/CeO2 microjunctions patterned by a focused ion beam on a La0.5Sr0.5CoO3 film exhibit reproducible reversible switching between a high resistance state (OFF) with insulating properties and a semiconducting or metallic low resistance state (ON) with resistance ratios up to 10(4). The influence of micro-scaling and defects formed at the cell boundaries during etching on its electrical characteristics has been analyzed. The appearance of a switching channel at the moment of the electrical forming, responsible for the memory effect, has been proved, along with a mechanism of a self-healing electrical breakdown.

• 出版日期2014-4-1