An Ultra-Wideband Balun Using Multi-Metal GaAs MMIC Technology

作者：Lan Xing^*; Fong Flavia; Kintis Mark; Kono Keith; Yamauchi Derrick; Luo Wen Ben; Farkas David

来源：IEEE Microwave and Wireless Components Letters, 2010, 20(8): 474-476.

DOI：10.1109/LMWC.2010.2050302

• Balun
• monolithic microwave integrated circuit (MMIC)
• ultra-wideband (UWB)

In this paper, we demonstrate an ultra-wideband MMIC Marchand balun that utilizes a two-layer benzocyclobutene (BCB) GaAs MMIC process with a total of 4 metal layers. This multi-metal technology is built upon a standard GaAs HEMT technology with full compatibility. The fabricated balun achieved an approximately 11:1 bandwidth from 2 to 22 GHz, with less than 3-degree maximum phase imbalance, and less than 1 dB maximum amplitude imbalance. To our knowledge, this is the largest bandwidth ratio ever reported for an MMIC Marchand balun.

• 出版日期2010-8