A novel nanowire channel poly-Si TFT functioning as transistor and nonvolatile SONOS memory

作者：Chen, Shih Ching^*; Chang, Ting Chang; Liu, Po Tsun; Wu, Yung Chun; Lin, Po Shun; Tseng, Bae Heng; Shy, Jang Hung; Sze, S M; Chang, Chun Yen; Lien, Chen Hsin

来源：IEEE Electron Device Letters, 2007, 28(9): 809-811.

DOI：10.1109/LED.2007.903885

• nanowire (NW)
• nonvolatile memory
• polysilicon (poly-Si)
• silicon-oxide-nitride-oxide-silicon (SONOS)
• thin-film transistor (TFT)

In this letter, a polycrystalline silicon thin-film transistor consisting of silicon-oxide-nitride-oxide-silicon (SONOS) stack gate dielectric and nanowire (NW) channels was investigated for the applications of transistor and nonvolatile memory. The proposed device, which is named as NW SONOS-TFT, has superior electrical characteristics of transistor, including a higher drain current, a smaller threshold voltage (V-th), and a steeper subthreshold slope. Moreover, the NW SONOS-TFT also can exhibit high program/erase efficiency under adequate bias operation. The duality of both transistor and memory device for the NW SONOS-TFT can be attributed to the trigate structure and channel corner effect.

• 出版日期2007-9
• 单位中山大学; 中国科学院电工研究所; 清华大学