Direct evidence of internal Schottky barriers at NiSi2 precipitates in silicon by electron holography

作者：Formanek P^*; Kittler M

来源：Journal of Applied Physics, 2005, 97(6): 063707.

DOI：10.1063/1.1863432

Thin NiSi2 precipitates in n-type Si were analyzed by electron holography. A phase shift of the electron wave was observed around the precipitate and gives direct evidence about the existence of an internal Schottky barrier. The barrier at the interface between the precipitate and the Si matrix, doped with 4x10(14) cm(-3) phosphorus, was estimated to yield about 90 mV. This value is about five times smaller than the dark barrier. The lowering of the barrier can be explained as a consequence of excess charge carriers generated by the incident electron beam.

• 出版日期2005-3-15