A planar layer configuration for surface plasmon interference nanoscale lithography

作者:Sreekanth K V*; Murukeshan V M; Chua J K
来源:Applied Physics Letters, 2008, 93(9): 093103.
DOI:10.1063/1.2976630

摘要

A planar layer configuration for surface plasmon interference lithography to realize one-dimensional periodic nanostructure is proposed and numerically demonstrated in this letter. High electric field distribution compared to conventional prism based configuration is found to be achievable with this and hence facilitate high contrast and high resolution features with good exposure depth. Finite-difference time-domain simulation results indicate that the feature size approximately at sub-65-nm is achievable by using silver metal layer and a p-polarized 427 nm wavelength illumination. Simulated resist profiles, using cellular automata model, obtained through this proposed configuration is also presented.

  • 出版日期2008-9-1
  • 单位南阳理工学院