Memristor-Based High-Speed Memory Cell With Stable Successive Read Operation

作者：Sakib Mohammad Nazmus; Hassan Rakibul; Biswas Satyendra N.^*; Das Sunil R.

来源：IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2018, 37(5): 1037-1049.

DOI：10.1109/TCAD.2017.2729464

• Memory cell
• memristance
• memristor
• nonvolatile
• precharge
• state drift

The memristor-based memory cell design is getting renewed attention in recent years due to its high speed and low power consumption. This paper aims at designing a novel hybrid memory cell incorporating a minimum number of transistors for a rapid bidirectional write operation. The read stability is one of the key elements for high efficiency and superior performance in memory. The memory cell in this paper was designed undertaking adequate measures for maintaining the stability in successive reads without any refresh operation. Extensive simulation experiments were conducted using 32-nm predictive technology model transistors and the results demonstrate superb performance and sound stability of the proposed memory cell in terms of read/write time as well as switching power consumptions.

• 出版日期2018-5