A persistently increasing resistance ratio and repeatable non-volatile memory in AZO/CZTSe/FTO resistive switching devices

作者：Zheng, Pingping; Zhang, Xuejiao; Sun, Bai^*; Mao, Shuangsuo; Zhu, Shouhui; Xia, Yudong; Zhao, Yong; Yu, Zhou^*

来源：Functional Materials Letters, 2018, 11(2): 1850023.

DOI：10.1142/S1793604718500236

• Cu2ZnSnSe4
• resistance ratio increasing
• non-volatile
• resistive switching
• memory device

In this paper, the Cu2ZnSnSe4 (CZTSe) film was deposited on the fluorine-doped SnO2 (FTO), and Al-doped ZnO (AZO) and FTO act as top and bottom electrodes for constructing a sandwich structure, in which the AZO/CZTSe/FTO device not only represents outstanding non-volatile resistive switching memory behavior, but also shows a persistently increasing resistance ratio phenomenon for the first time. This work reveals that the device based on CZTSe film holds an excellent memory effect for non-volatile memory applications in the electronic equipment.

• 出版日期2018-4
• 单位河北北方学院; 西南交通大学