A narrow process window for the preparation of polytypes of microcrystalline silicon carbide thin films by hot-wire CVD method

作者：Yoshida Norimitsu^*; Terazawa Sho; Hayashi Kotaro; Hamaguchi Tomonari; Natsuhara Hironori; Nonomura Shuichi

来源：Journal of Non-Crystalline Solids, 2012, 358(17): 1987-1989.

DOI：10.1016/j.jnoncrysol.2012.03.028

• Microcrystalline silicon carbide films
• Polytypes
• Hot-wire CVD method

Effects of deposition conditions on the structure of microcrystalline silicon carbide (mu c-SiC) films prepared by hot-wire chemical vapor deposition (hot-wire CVD) method have been investigated. It is found from X-ray diffraction patterns of the film that a diffraction peak from crystallites from hexagonal polytypes of SiC is observed in addition to those of 3 C-SiC crystallites. This result is obtained in the film under a narrow deposition conditions of SiH3CH3 gas pressure of 8 Pa, the H-2 gas pressure of 80-300 Pa and the total gas pressure of 40-300 Pa under fixed substrate and filament temperatures employed in this study. Furthermore, the grain size of hexagonal crystallites (about 20 nm) on c-Si substrates becomes larger than that of 3 C-SiC crystallites (about 10 nm) for the films deposited under the total gas pressure of 36-88 Pa. The fact that microcrystalline hexagonal SiC can be deposited under limited deposition conditions could be interpreted in the context of a result for c-SiC polytypes prepared by thermal CVD method.

• 出版日期2012-9-1