Direct Bonding of Aluminum to Alumina for Thermal Dissipation Purposes

作者:Lin Chun Yu*; Tuan Wei Hsing
来源:International Journal of Applied Ceramic Technology, 2016, 13(1): 170-176.
DOI:10.1111/ijac.12419

摘要

In this study, aluminum foil was bonded directly to alumina substrate at a temperature higher than 1000 degrees C in an inert atmosphere. A platinum marker was used to locate the original interface after bonding. With the help of the Pt marker, the microstructure analysis revealed that the aluminum foil oxidized first, and the newly formed alumina was subsequently bonded to the alumina substrate. The bonding strength increased with increases in bonding temperature until 1100 degrees C. The strong interface also led to high thermal conductivity.

  • 出版日期2016-2