A Subthreshold Symmetric SRAM Cell With High Read Stability

作者：Saeidi Roghayeh^*; Sharifkhani Mohammad; Hajsadeghi Khosrow

来源：IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2014, 61(1): 26-30.

DOI：10.1109/TCSII.2013.2291064

• Data stability
• iso-area analysis
• subthreshold static random access memory (SRAM)

This brief introduces a differential eight-transistor static random access memory (SRAM) cell for subthreshold SRAM applications. The symmetric topology offers a smaller area overhead compared with other symmetric cells for the same stability in the read operation. Two transistors isolate the cell storage nodes from the read operation path to maintain the data stability of the cell. This topology improves the data stability at the expense of read operation delay. Thorough postlayout Monte Carlo worst corner simulations in 45-nm CMOS technology are conducted. The proposed cell operates down to 0.35 V with a read noise margin of 74 mV and a write noise margin of 92 mV. Under this condition, the read and write noise margins of the conventional six-transistor (6T) cell are 18 and 27mV, respectively. The cell area is 1.57x the conventional 6T SRAM cell area in 45-nm design rules.

• 出版日期2014-1