An HF-Free Etching of SiO2 for Soft Lithography

作者：Zhao, Shichao^*; Zhang, Qi; Lv, Yanfei; Wang, Xin

来源：IEEE Transactions on Nanotechnology, 2016, 15(4): 666-670.

DOI：10.1109/TNANO.2016.2572120

• Soft lithography
• NaF
• NH4F
• etching
• SiO2

We show that inorganic fluorides, such as NaF and NH4F, can etch SiO2 in the presence of HCl vapor resulting in a negative tone pattern transfer to a SiO2 substrate. Using a polydimethylsiloxane stamp, we demonstrate high-quality one-step pattern transfer to a SiO2 substrate. Compared with traditional HF vapor etching and buffered oxide etching methods, the current approach avoids direct handling of HF and, therefore, significantly reduces the associated safety risks. Our results suggest that fluoride etching could be a general purpose pattern transfer technique for soft lithography of SiO2 substrates.

• 出版日期2016-7
• 单位杭州电子科技大学