A Tunable Quantum-Dot Device Based on Cross-Bar Graphene Nanoribbon Structures

作者：Wang Z F; Shi Q W^*; Chen Jie

来源：Journal of Nanoscience and Nanotechnology, 2009, 9(8): 4580-4585.

DOI：10.1166/jnn.2009.1078

• Graphene
• Random-Access Memory
• Tight-Binding Model
• Nanoelectronics

In this paper, we present a tunable quantum-dot nanoelectronic device built upon a patterned graphene nanoribbon (GNR) cross-bar structure. The cross junction can confine electronic states with applied gate voltages. By varying the length and width of the cross junction, we can alter the spatial confinement and the number of discrete levels within the junction. In addition, quantum dots can be trapped in the cross junction regardless of the irregularities along the graphene edges. In this design, each cross junction is a basic device element. By applying controllable gate voltages perpendicular to the ribbon, we can tune cross junction in 'on' or 'off' state, which corresponds to the existence or absence of quantum dots. This design can also be used to make a random access memory (RAM) array.

• 出版日期2009-8
• 单位中国科学技术大学