A Semiphysical Large-Signal Compact Carbon Nanotube FET Model for Analog RF Applications

作者：Schroeter Michael; Haferlach Max; Pacheco Sanchez Anibal; Mothes Sven; Sakalas Paulius; Claus Martin

来源：IEEE Transactions on Electron Devices, 2015, 62(1): 52-60.

DOI：10.1109/TED.2014.2373149

• Carbon nanotube field-effect transistor (CNTFET)
• compact transistor modeling
• high-frequency circuit design

A compact large-signal model, called Compact Carbon Nanotube Model (CCAM), is presented that accurately describes the shape of DC and small-signal characteristics of fabricated carbon nano-tube FETs (CNTFETs). The new model consists of computationally efficient and smooth current and charge formulations. The model allows, for a given gate length, geometry scaling from single-finger single-tube to multifinger multitube transistors. Ambipolar transport, temperature dependence with self-heating, noise, and a simple trap model have also been included. The new model shows excellent agreement with the data from both the Boltzmann transport equation and measurements of Schottky-barrier CNTFETs and has been implemented in Verilog-A, making it widely available across circuit simulators.

• 出版日期2015-1