A Novel Technique for Curing Hot-CarrierInduced Damage by Utilizing the Forward Current of the PN-Junction in a MOSFET

作者：Lee Geon Beom; Kim Choong Ki; Park Jun Young; Bang Tewook; Bae Hagyoul; Kim Seong Yeon; Ryu Seung Wan; Choi Yang Kyu^*

来源：IEEE Electron Device Letters, 2017, 38(8): 1012-1014.

DOI：10.1109/LED.2017.2718583

• Degradation
• forward current
• gate dielectric curing
• hot-carrier injection (HCI)
• Joule heat
• lowfrequency noise (LFN) characterization
• metal-oxide-silicon field effect transistor (MOSFET)
• PN-junction
• recovery
• short-channel effects (SCEs)

The hot-carrier-induced damage of a gate dielectric was cured with Joule heat generated by the forward current of the p-n junction between the body and drain, for the first time. The effective recovery voltage and pulse timewere optimized to cure the gatedielectricdamage produced by hot-carrier injection. Moreover, iterative damage and cyclic curing were experimentally demonstrated. Throughlow-frequency noise analyses, the degradationand recovery were verified by identifying trap density along the depth of the gate dielectric. Furthermore, this proposed method produced nearly the same recovery characteristics through source-to-body junction current in a short-channel device.

• 出版日期2017-8