Atomistic Full-Band Design Study of InAs Band-to-Band Tunneling Field-Effect Transistors

作者：Luisier Mathieu^*; Klimeck Gerhard

来源：IEEE Electron Device Letters, 2009, 30(6): 602-604.

DOI：10.1109/LED.2009.2020442

• Band-to-band tunneling (BTBT) transistors
• full-band and atomistic quantum transport
• subthreshold swing (SS)
• tight-binding

Band-to-band tunneling field-effect transistors (BTBT FETs) are expected to exhibit a subthreshold swing (SS) better than the 60-mV/dec limit of conventional metal-oxide-semiconductor FETs at room temperature. Through atomistic modeling of a suite of realistically extended InAs p-i-n single-gate (SG) and dual-gate (DG) ultrathin-body (UTB) and gate-all-around nanowire (GAA NW) devices with a gate length of 20 nm, we demonstrate that such a reduced SS can only be achieved if the electrostatic potential under the gate contact is very well controlled. We find that GAA NWs keep an SS less than 60 mV/dec for diameters larger than 10 nm, while the bodies in DG and SG UTBs must be scaled down to 7 and 4 nm, respectively. Still, all the considered devices are characterized by an ON current smaller than the ITRS requirements.

• 出版日期2009-6