摘要
High unintentional n- type doping and poor charge transport are key limitations in solution processed ZnO thin films. In this context, we report ZnO films with a low residual donor concentration and high texture, synthesized by low-cost electrodeposition on copper. They possess an equilibrium free electron concentration of similar to 2.8 x 10(14) cm(-3) and a minimum electron mobility of 80 cm(2) V-1 s(-1). The resulting Schottky diodes demonstrate rectification ratios of similar to 10(6), ideality factors of similar to 2, and low on-state resistance.
- 出版日期2016
- 单位Saskatchewan