Using graded barriers to control the optical properties of ZnO/Zn0.7Mg0.3O quantum wells with an intrinsic internal electric field

作者：Hall C R^*; Dao L V; Koike K; Sasa S; Tan H H; Inoue M; Yano M; Jagadish C; Davis J A

来源：Applied Physics Letters, 2010, 96(19): 193117.

DOI：10.1063/1.3428430

• II-VI semiconductors
• magnesium compounds
• photoluminescence
• semiconductor growth
• semiconductor quantum wells
• time resolved spectra
• wave functions
• zinc compounds

Quantum wells with graded barriers are demonstrated as a means to control both the transition energy and electron-hole wave function overlap for quantum wells with an intrinsic internal electric field. In the case of c-axis grown ZnO/ZnMgO quantum wells, the graded barriers are produced by stepping the magnesium composition during the growth process. Four quantum wells with different structures are examined, where each well has similar transition energy, yet a wide range of wave function overlaps are observed. Photoluminescence and time resolved photoluminescence show good agreement with calculations.

• 出版日期2010-5-10