A single phase semiconducting Ca-silicide film growth by sputtering conditions, annealing temperature and annealing time

作者：Yang Yinye; Xie Quan^*

来源：Journal of Materials Science, 2009, 44(14): 3877-3882.

DOI：10.1007/s10853-009-3529-1

Ca films were directly deposited on Si(100) substrates under the same sputtering power and Ar flux by Radio frequency (R.F.) magnetron sputtering system (MS) and were subsequently annealed at 800 A degrees C for 90 min in a vacuum furnace. The structural and morphological features of the resultant films are tested by X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy dispersive analysis of X-rays (EDAX). The cubic phase Ca(2)Si film, the simple orthorhombic phase Ca(2)Si film, and the tetragonal phase Ca(5)Si(3) film are grown directly and individually on Si(100) substrates, respectively. The experimental results indicate that the selective growth of a single phase Ca-silicide from Ca-Si system of the existence of multiple silicide phases depends on sputtering conditions, annealing temperature, and annealing time. Besides, 800 A degrees C is the adaptive annealing temperature for a single phase Ca-silicide film growth.

• 出版日期2009-7
• 单位贵州大学