Annealing effects on the structural, electrical and H-2 sensing properties of transparent ZnO thin films, grown by pulsed laser deposition

作者：Stamataki M^*; Fasaki I; Tsonos G; Tsamakis D; Kompitsas M

来源：Thin Solid Films, 2009, 518(4): 1326-1331.

DOI：10.1016/j.tsf.2009.02.156

• Zinc oxide (ZnO)
• Pulsed laser deposition (PLD)
• Heat treatment
• Hall effect
• Atomic force microscopy (AFM)
• Structural properties
• Sensors
• Hydrogen

Transparent zinc oxide thin films were grown by reactive pulsed laser deposition on glass substrates. The substrates were kept at 200 degrees C constant temperature. Post-deposition heat treatment, applied to further promote crystallization and overcome any oxygen deficiency, yielded transparent thin films. Structural investigations carried out by atomic force microscopy (AFM) and X-ray diffraction (XRD), have shown a strong influence of deposition technique parameters and post-annealing on the crystallinity of the zinc oxide films. The gas sensing characteristics of these films were investigated towards different hydrogen concentrations (5000-30,000 ppm) at a selected operating temperature within the 150-230 degrees C range.

• 出版日期2009-12-15