A current source gate driver achieving switching loss savings and gate energy recovery at 1-MHz

作者：Eberle Wilson; Zhang Zhiliang; Liu Yan Fei; Sen Paresh C

来源：IEEE Transactions on Power Electronics, 2008, 23(2): 678-691.

DOI：10.1109/TPEL.2007.915769

• metal oxide semiconductor field effect transistor (MOSFET)
• root mean square (RMS)
• zero voltage switching (ZVS)

In this paper, a new current source gate drive circuit is proposed for power MOSFETs. The proposed circuit achieves quick turn on and turn off transition times to reduce switching loss and conduction loss in power MOSFETs. In addition, it can recover a portion of the CV(2) gate energy normally dissipated in a conventional driver. The circuit consists of four controlled switches and a small inductor (typically 100 nH or less). The current through the inductor is discontinuous in order to minimize circulating current conduction loss. This also allows the driver to operate effectively over a wide range of duty cycles, with constant peak current-a significant advantage for many applications since turn on and turn off times do not vary with the operating point. Experimental results are presented for the proposed driver operating in a boost converter at 1 MHz, 5 V input, 10 V/5 A output. At 5 V gate drive, a 2.9% efficiency improvement is achieved representing a loss savings of 24.8% in comparison to a conventional driver.

• 出版日期2008-3