Improvement in the intense pulsed emission stability of grown CNT films via an electroless plated Ni layer

作者：Zeng FanGuang^*; Li Xin; Liu WeiHua; Qiao ShuZhen; Ma HuaLi; Zhang Rui; Xia LianSheng; Chen Yi; Liu XingGuang; Zhang Huang

来源：Chinese Science Bulletin, 2011, 56(22): 2379-2382.

DOI：10.1007/s11434-011-4567-z

• carbon nanotube
• nickel layer
• intense pulsed emission
• improved emission stability
• normalized current

Carbon nanotube (CNT) films were grown on silicon wafers with and without a nickel layer (Si-CNT and Ni-CNT) via the pyrolysis of iron phthalocyanine. The nickel layer was prepared using the electroless plating method. To study the emission stability of Si-CNT and Ni-CNT cathodes during intense pulsed emission, emission characteristics were measured repeatedly with a diode structure using a Marx generator as a voltage source. For the peak values of the pulsed voltage, which were in the range between 1.62-1.66 MV (corresponding to electric field intensities between 11.57-11.85 V/mu m), the first cycle emission current was 109.4 A for Si-CNT and 180.5 A for Ni-CNT. By comparing the normalized emission currents of the Si-CNT and Ni-CNT cathodes, the improvement in the emission stability can be easily quantified. The number of emission cycles necessary for the peak current to decay from 100% to 50% increased from similar to 3 for Si-CNT to similar to 11 for a Ni-CNT film.

• 出版日期2011-8
• 单位中国工程物理研究院; 中国工程物理研究院流体物理研究所; 西安交通大学; 郑州航空工业管理学院