Al0.25Ga0.75N/GaN Schottky Barrier Photodetectors with an Al0.3Ga0.7N Intermediate Layer

作者：Lee K H^*; Chang P C; Chang S J; Su Y K; Wang Y C; Yu C L; Wu S L

来源：Journal of the Electrochemical Society, 2009, 156(7): J199-J202.

DOI：10.1149/1.3129445

AlGaN/GaN Schottky barrier photodetectors (PDs) with and without a low temperature (LT) AlGaN intermediate layer (IML) were both fabricated and characterized. It was found that we can reduce dark leakage current by around 4 orders of magnitude and enhance UV-to-visible rejection ratio by around 2 orders of magnitude by using an LT AlGaN IML. With -5 V applied bias, we can achieve lower noise equivalent power and higher normalized detectivity (D*) of the PD, which were 5.19 x 10(-10) W and 2.8 x 10(9) cm Hz(0.5) W-1, respectively, with an LT AlGaN IML.

• 出版日期2009