Axial heterostructure of Au-catalyzed InGaAs/GaAs nanowires grown by metal-organic chemical vapor deposition

作者：Yuan, Huibo; Li, Lin^*; Li, Zaijin; Wang, Yong; Qu, Yi; Ma, Xiaohui; Liu, Guojun

来源：Chemical Physics Letters, 2018, 692: 28-32.

DOI：10.1016/j.cplett.2017.11.061

• Nanowire
• MOCVD
• Axial heterostructure
• InGaAs/GaAs

Nanowires (NWs) of GaAs and InGaAs/GaAs axial heterostructure are fabricated by metal-organic chemical vapor deposition (MOCVD) following the vapor-liquid-solid (VLS) mechanism. Thin film of Au is coated to generate catalytic droplets and the impact of film thickness on distribution of catalytic droplets is studied. With growth temperature varying, different geometries of GaAs NWs are observed and an assumption has been proposed to explain the phenomenon. InGaAs/GaAs NWs with axial heterostructures are synthesized. Most of InGaAs/GaAs NWs are perpendicular to substrates with cylindrical morphology and distinct heterostructure interface. Energy Dispersive X-ray Spectroscopy (EDX) line-scan's been applied to investigate the concentration changes of nanowires, indicating pure axial heterostructures without radial growth.

• 出版日期2018-1-16
• 单位长春理工大学; 海南师范大学