摘要
A lateral current regulator diode (CRD) with field plates is proposed and experimentally demonstrated. The proposed CRD is based on the junction field-effect transistor (JFET) structure. A cathode field plate is adopted to alleviate the channel-length modulation effect and to improve the saturated I-V characteristics. An anode field plate is induced to achieve a high breakdown voltage V-B of the CRD. The influence of the key device parameters on the I-V characteristics of the lateral CRD are discussed. Experimental results show that the proposed CRD presents good I-V characteristics with a high V-B about 180 V and a low knee voltage (V-k) below 3 V. Furthermore, the proposed CRD has a negative temperature coefficient. The well characteristic of the proposed CRD makes it a cost-effective solution for light-emitting-diode lighting.
- 出版日期2016-9
- 单位电子科技大学; 电子薄膜与集成器件国家重点实验室