摘要

Cu/SiO2 composite thin films were deposited on n-type Si (111) substrates by radio frequency (RF) magnetron co-sputtering method, annealed at high temperature in N-2 atmosphere, then cooling and oxidation in the air to fabricate low-dimensionality CuO nano-structure. The micro-structure and photo- luminescent properties were studied. The main phase of sample is cubic CuO(200) crystal face and sample forms nano-line structure with Cu, O elements as the main components to form CuO/SiO2 Composite thin film in the sample surface after annealing at 1100 degrees C. The ultraviolet light and purple-light appear in photoluminescence (PL) spectra, which is abscribed to the electron transition from the defect level, resulting from the Cu vacancies to the conductor hand of CuO composite thin films.