摘要

ZnO/graphene composite thin film was deposited through a sol-gel process. The thin film crystal structure was characterized by XRD, the result showed that the presence of graphene did not destroy the crystal structure of ZnO. The optical spectrum showed that the introduction of graphene into ZnO did not bring an obvious effects on optical properties. To further investigate the thin film properties, ZnO and ZnO/graphene thin film transistors were fabricated and characterized. The device characterization results show that ZnO/graphene TFT has maintained a high ON/OFF ratio while the field-effect mobility is more than twice increased over ZnO TFT.