Analysis of transient behavior of AlGaN/GaN MOSHFET

作者：Hayashi Y; Kishimoto S; Mizutani T^*

来源：Solid-State Electronics, 2010, 54(11): 1451-1456.

DOI：10.1016/j.sse.2010.07.001

• HfO2/AlGaN/GaN MOSHFET
• Device simulation
• Interface trap
• Transient response

The threshold voltage of HfO2/AlGaN/GaN MOSHFETs was dependent on the time after the bias stress and the transconductance decreased at large gate voltages. These behaviors were explained based on the two-dimensional device simulation assuming three trap levels of E-C-E-T = 0.4, 0.765, 1.65 eV with short, medium and long time constants at the HfO2/AlGaN interface, which were obtained based on the analytical consideration of the experimental results.

• 出版日期2010-11