摘要
A linearized ultra-wideband (UWB) CMOS low noise amplifier (LNA) is proposed. The linearity is improved by a post distortion technique, employing PMOS as an auxiliary FET to cancel the second-and the third-order nonlinear currents of common-gate LNA. A three-section band-pass Chebyshev filter is presented for wideband input matching. The LNA implemented in a 0.18 mu m CMOS technology demonstrates that IIP3 and IIP2 have about 9 and 6.9 dB improvements in broad frequency range, respectively. Power gain of 9.6-12.6 dB and noise figure (NF) of 3.9-5.8 dB are obtained in the frequency range of 1.6-9.7 GHz with a power dissipation of 10.6 mW under a 1.8 V power supply.
- 出版日期2013-11
- 单位北京微电子技术研究所; 中国电子科技集团公司第三十八研究所; 电子科技大学