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摘要
A fully CMOS process-compatible differential Tesla-Volt multiplier cell is proposed. It is made of a pair of identical split-drain magnetic field-effect transistors. An absolute and a relative Tesla-Volt multiplying with sensitivities of 2.85 muA/VT and 1.2%/VT, respectively, have been measured. The double-balanced configuration gives a good linearity of the Tesla-Volt multiplying function.
- 出版日期2004-5
- 单位南阳理工学院
