New synthetic method of forming aluminum oxynitride by plasma arc melting

作者：Fukuyama H^*; Nakao W; Susa M; Nagata K

来源：Journal of the American Ceramic Society, 1999, 82(6): 1381-1387.

A new synthetic method of forming the gamma-phase of aluminum oxynitride (alon) has been proposed. alon has been successfully synthesized by the DC nitrogen plasma are using alpha-Al2O3 and AIN as starting materials. Alon rapidly forms in a liquid state under thermal plasma. The obtained lattice parameter of alon has been determined as a function of the concentration of Al2O3. Evaporation takes place during are melting. The condensed alon from the vapor consists of nanoscale-sized spherical particles, and these particles are in single crystals. The evaporation mechanism of alon during are melting is discussed. Thus, are plasma processing is a promising method for synthesizing alon and producing the ultrafine powder.

• 出版日期1999-6