A silicon MEMS structure for characterization of femto-farad-level capacitive sensors with lock-in architecture

作者：Wei, J.^*; Yue, C.; Chen, Z. L.; Liu, Z. W.; Sarro, P. M.

来源：Journal of Micromechanics and Microengineering, 2010, 20(6): 064019.

DOI：10.1088/0960-1317/20/6/064019

This paper presents a silicon MEMS capacitive structure to investigate a test methodology for fF-level capacitive sensors' measurement. The device mimics a capacitive sensor with a changing intermediate layer between the electrodes. A single mask bulk micromachining process is used to fabricate the device, which has a nominal capacitance of 1.2 fF. A high performance measurement setup based on lock-in principle is developed to detect the capacitance variation. The maximum capacitance variation of the fabricated device is 0.31 fF, and the capacitance detection limit is 0.095 aF Hz(-1/2).

• 出版日期2010-6
• 单位清华大学