Bonding-antibonding ground-state transition in coupled Ge/Si quantum dots

作者：Yakimov A I^*; Bloshkin A A; Dvurechenskii A V

来源：Semiconductor Science and Technology, 2009, 24(9): 095002.

DOI：10.1088/0268-1242/24/9/095002

We investigate the two lowest single-particle hole states in the double quantum dots made of two vertically coupled Ge/Si nanoclusters (quantum-dot molecules), using a six-band k . p model. A bonding-antibonding ground-state transition is observed with an increasing interdot distance. This result is counterintuitive since the antibonding molecular ground state is never observed in natural diatomic molecules. We demonstrate that the reordering of bonding and antibonding orbitals with an increasing interdot distance is caused by elastic strain and spin-orbit interaction of holes.

• 出版日期2009-9