Potential energy threshold of surface erosion on GaN by impact of slow highly charged heavy ions

作者：Zhang, L. Q.; Zhang, C. H.^*; Yang, Y. T.; Han, L. H.; Li, B. S.; Song, S. J.; Sun, Y. M.; Jin, Y. F.

来源：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms , 2011, 269(3): 396-399.

DOI：10.1016/j.nimb.2010.11.043

• Highly charged ions
• Potential energy
• Surface erosion
• AFM
• Gallium nitride (GaN)

In the present work the erosion behavior on the surface of GaN epi-layer by the impact of various slow highly charged heavy ions (SHCIs, including Arq+. Xeq+ and Pbq+, in two incidence geometries) was investigated. Atomic force microscopy reveals a well-defined threshold of potential energy carried by the incident heavy ions accounting for the surface erosion. This threshold also depends on the projected range of the SHCIs, the longer the projected range, the higher the potential energy required for the onset of surface erosion. And the etched depth is close to a linear function of potential energy deposited, increasing with the potential energy increases. Moreover, the etching rate for 60 degrees off normal incidence is by more than a factor of 2 larger than etching rate for normal incidence, and the etch rate by Xeq+ is larger than by Pbq+ under the same potential energy and incident direction. And a mechanism is discussed.

• 出版日期2011-2-1
• 单位中国科学院近代物理研究所