科研之友
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摘要
The selective etching process for elevated self-aligned suicide (salicide) utilizing PtSi has been investigated. We have developed a novel selective etching process utilizing dilute aqua regia followed by etching with dilute HF. It was found that the residual Pt-rich silicide layers on the sidewall were successfully removed. We also investigated work function modulation of PtSi alloyed with Hf. The barrier height for electrons of Pt Si was reduced approximately 0.1 eV for Pt(x)Hf(1-x)Si formed by the silicidation of Pt (17 nm)/Hf (4 nm)/Si (100) stacked layer structures.
- 出版日期2010-8
