Nonequilibrium Probing of Two-Level Charge Fluctuators Using the Step Response of a Single-Electron Transistor

作者：Pourkabirian A^*; Gustafsson M V; Johansson G; Clarke J; Delsing P

来源：Physical Review Letters, 2014, 113(25): 256801.

DOI：10.1103/PhysRevLett.113.256801

We report a new method to study two-level fluctuators (TLFs) by measuring the offset charge induced after applying a sudden step voltage to the gate electrode of a single-electron transistor. The offset charge is measured for more than 20 h for samples made on three different substrates. We find that the offset charge drift follows a logarithmic increase over 4 orders of magnitude in time and that the logarithmic slope increases linearly with the step voltage. The charge drift is independent of temperature, ruling out thermally activated TLFs and demonstrating that the charge fluctuations involve tunneling. These observations are in agreement with expectations for an ensemble of TLFs driven out of equilibrium. From our model, we extract the density of TLFs assuming either a volume density or a surface density.

• 出版日期2014-12-19