Dopant profiling in silicon nanowires measured by scanning capacitance microscopy

作者：Bassani Franck^*; Periwal Priyanka; Salem Bassem; Chevalier Nicolas; Mariolle Denis; Audoit Guillaume; Gentile Pascal; Baron Thierry

来源：Physica Status Solidi-Rapid Research Letters, 2014, 8(4): 312-316.

DOI：10.1002/pssr.201409041

• silicon nanowires
• dopant profiling
• scanning electron microscopy
• scanning capacitance microscopy

Silicon nanowires (SiNWs) with axial doping junctions were synthesized via the Au-catalyzed vapor-liquid-solid growth method with the use of HCl. In this work, dopant profiling from three axially doped SiNWs with p-i, p-n and n-i-p junctions were investigated using both scanning electron microscopy (SEM) and scanning capacitance microscopy (SCM). It turns out that observed doping contrasts in SEM are also affected by the surface roughness and sample charging. In contrast, SCM allows us to delineate with sub-10 nm resolution the electrical junctions and provides a relative value of the doping concentration in each segment of the NW. SCM clearly evidences the expected doping regions within these SiNWs thanks to the addition of HCl during the growth that strongly prevents shell overgrowth.

• 出版日期2014-4