High switching endurance in TaOx memristive devices

作者：Yang J Joshua^*; Zhang M X; Strachan John Paul; Miao Feng; Pickett Matthew D; Kelley Ronald D; Medeiros Ribeiro G; Williams R Stanley

来源：Applied Physics Letters, 2010, 97(23): 232102.

DOI：10.1063/1.3524521

We demonstrate over 1 x 10(10) open-loop switching cycles from a simple memristive device stack of Pt/TaOx/Ta. We compare this system to a similar device stack based on titanium oxides to obtain insight into the solid-state thermodynamic and kinetic factors that influence endurance in metal-oxide memristors.

• 出版日期2010-12-6