Aluminum and nitrogen impurities in Wurtzite ZnO: first-principles studies

作者:Li, P.*; Deng, Sh. H.; Li, Y. B.; Huang, J.; Liu, G. H.; Zhang, L.
来源:Physica B: Condensed Matter , 2011, 406(17): 3125-3129.
DOI:10.1016/j.physb.2011.03.079

摘要

First-principles calculations have been performed to investigate the doping behaviors of Al and N dopant impurities in ZnO. According to the results, in the Al mono-doping case, the impurity states are quite delocalized, the corresponding effective masses are small, and the formation energy is as low as -9.71 eV. In the N mono-doping case, the impurity states are localized, the effective masses are large, and the formation energy is high (4.55 eV in the most favorable extreme O-rich conditions). In the Al-N codoping case, the corresponding effective masses are marked decreased compared to the N mono-doping situations, and the formation energy of the N-Al-N system is as low as -2.54 eV in the O-rich condition. The above results can explain the electrical behaviors of the doped or codoped ZnO systems observed in experiments.