A 0.06 mm 11 mW Local Oscillator for the GSM Standard in 65 nm CMOS

作者:Dal Toso Stefano*; Bevilacqua Andrea; Tiebout Marc; Da Dalt Nicola; Gerosa Andrea; Neviani Andrea
来源:IEEE Journal of Solid-State Circuits, 2010, 45(7): 1295-1304.
DOI:10.1109/JSSC.2010.2049457

摘要

A GSM-compliant local oscillator consuming a tiny die area of only 0.06 mm(2) and drawing 9 mA from a 1.2 V supply has been designed in a 65 nm CMOS process using thin-oxide devices only. The system is made of a 13 to 15 GHz LC VCO followed by a divide-by-four injection-locked frequency divider. The divider employs a ring oscillator-based topology leading to a two octave locking range with limited area and power consumption. The phase noise at the output of the divider is below -133 dBc/Hz at 3 MHz offset over the tuning range.

  • 出版日期2010-7