Anisotropic Ballistic Transport through a Potential Barrier on Monolayer Phosphorene

作者：Cheng, Fang^*; He, Bing

来源：Chinese Physics Letters, 2016, 33(5): 057301.

DOI：10.1088/0256-307X/33/5/057301

• FIELD-EFFECT TRANSISTORS
• LAYER

We demonstrate theoretically the anisotropic quantum transport of electrons through a single barrier on monolayer phosphorene. Using an effective kappa.p Hamiltonian, we find that the transmission probability for transport through n-n-n (or n-p-n) junction is an oscillating function of the incident angle, the barrier height, as well as the incident energy of electrons. The conductance in such systems depends sensitively on the transport direction due to the anisotropic effective mass. By tuning the Fermi energy and gate voltage, the channels can be transited from opaque to transparent, which provides us with an efficient way to control the transport of monolayer phosphorene-based microstructures.

• 出版日期2016-5
• 单位长沙理工大学