Anisotropic relaxation and crystallographic tilt in BiFeO3 on miscut SrTiO3 (001)

作者：Sichel Rebecca J^*; Grigoriev Alexei; Do Dal Hyun; Baek Seung Hyub; Jang Ho Won; Folkman Chad M; Eom Chang Beom; Cai Zhonghou; Evans Paul G

来源：Applied Physics Letters, 2010, 96(5): 051901.

DOI：10.1063/1.3299256

• bismuth compounds
• epitaxial growth
• polarisation
• relaxation
• strontium compounds
• substrates
• thin films
• X-ray diffraction

Epitaxial BiFeO3 thin films on miscut (001) SrTiO3 substrates relax via mechanisms leading to an average rotation of the crystallographic axes of the BiFeO3 layer with respect to the substrate. The angle of the rotation reaches a maximum in the plane defined by the surface normal of the film and the direction of the surface miscut. X-ray microdiffraction images show that each BiFeO3 mosaic block is rotated by a slightly different angle and contains multiple polarization domains. These effects lead to a complicated overall symmetry in BiFeO3 thin films. This relaxation mechanism can be extended to other complex oxides.

• 出版日期2010-2-1