A novel structure ZnO-Fe-ZnO thin film memristor

作者：Santos Y P^*; Valenca E; Machado R; Macedo M A

来源：Materials Science in Semiconductor Processing, 2018, 86: 43-48.

DOI：10.1016/j.mssp.2018.06.016

• Memristor
• Thin film
• Nanoelectronics
• Multilayer
• ZnO
• ZnO-Fe-ZnO

The memristor behavior of thin films having a multilayer Pt/ZnO/Fe/ZnO/ITO structure, deposited using RF/DC magnetron sputtering, was studied. The iron layer between the ZnO layers facilitates the change in the resistance of the device through the oxidation of the iron at the ZnO/Fe interface, thus generating oxygen vacancies and providing electrons from the redox reaction between gamma-Fe2O3 and Fe3O4. The main mechanisms of conduction include Poole-Frenkel emission and Fowler-Nordhein tunneling with the ion migration, oxygen vacancies, and redox reactions of iron oxides (gamma-Fe2O3 and Fe3O4). The response of the device to sequential voltage pulses in terms of variation in resistance, R-ERASE/R-WRITE ratio, retention time, and control of the resistance state, through control of the applied voltage, was also evaluated.

• 出版日期2018-11-1