Natural Fluctuations in Tunneling-Current Distribution over the Area of a Reverse-Biased Silicon p-n Junction

作者：Kozlov V A^*; Obolensky S V; Shmagin V B; Krasilnik Z F

来源：Semiconductors, 2012, 46(1): 130-135.

DOI：10.1134/S1063782612010137

The Monte Carlo method is used for calculating the distributions of the electric field, potential, and interband-tunneling probability over the area of a reverse-biased p-n junction, taking into account the discreteness of the charge distribution of ionized donors and acceptors. The calculations are carried out in a three-dimensional approximation on the basis of the principle of superposition of the electric fields of "ionized-donor-ionized-acceptor" ion pairs. It is shown that, in the region of clusters of three or more ion pairs with the characteristic distance of about half of the de-Broglie wavelength between them, an increase in the tunneling probability related to a local increase in the electric-field strength is observed.

• 出版日期2012-1