科研之友
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摘要
The characteristics of Si etching using nonionic cluster beams with highly reactive chlorine-trifluoride (ClF(3)) gas were examined. An etching rate of 40 mu m/min or higher was obtained even at room temperature when a ClF(3) molecular cluster was formed and irradiated on a single-crystal Si substrate in high vacuum. The etching selectivity of Si with respect to a photoresist and SiO(2) was at least 1 : 1000. We also succeeded in highly anisotropic etching with an aspect ratio of 10 or higher. Moreover, this etching method has a great advantage of low damage, compared with the conventional plasma process.
- 出版日期2010
