科研之友
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摘要
A new method for fabrication of VOx thin film on substrates of silicon (100) and quartz glass has been described. The metallic vanadium thin films were deposited by ion beam sputtering followed by a post-deposition oxidation. The X-ray diffractometry shows that the main compound is vanadium dioxide and the highest temperature coefficiency of resistance is up to 3%/degreesC for as-deposited VOx thin films with size of 25 x 25 turn and thickness of 200 nm. The new growth method by ion beam sputtering provides a reliable control for x value in VOx films.
- 出版日期2003-4
- 单位华中科技大学
